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1LU Min*,ZHANG Guo-Guang,FU Kai,YU Guo-Hao,Gallium Nitride room temperature α particle detectors, Chinese physics letters 27,052901(2010).        

2、付凯*于国浩、陆敏,GaN肖特基核辐射探测器对射线的响应时间特性研究。原子能科学技术 44,444 (2010)。

3、Rumin Gong*, JinyanWang, Zhihua Dong, Shenghou Liu, Min Yu, Cheng P Wen, Yilong Hao, Bo Shen, Yong Cai, Baoshun Zhang and Jincheng Zhang.Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs.  Journal of Physics D: Applied Physics 43,395102(2010).

4、王国斌*张永红、王怀兵。氮化镓生长反应模型与数值模拟研究(I)人工晶体学报(2010)

5、王国斌*张永红、王怀兵,氮化镓生长反应模型与数值模拟研究(II).人工晶体学报 (2010)

6、李海军*张晓东、王敏锐、林文魁、时文华、钟飞、张宝顺.Effects of the periodicity of the subwavelength hole arrays and hole shape of a thin gold film on the optical transmission characteristics. Optoelectronics Letters (2009).

7、李海军*林文魁、张晓东、査强、王媛、朱贺、付思齐、张宝顺,应用于高密度近场光存储技术的亚波长纳米孔研究。半导体光电 (2010)

8、李海军*林文魁、张晓东、王逸群、曾春红、赵德胜、王敏锐、张宝顺,应用表面等离子体近场光刻技术制作二维纳米阵列。微纳电子技术 (2010)

9、林文魁*李海军、朱贺、付思齐、吕佳楠、张宝顺,基于表面等离子体激元效应的新型滤波器设计。应用光学 (2010)

10、李海军*时文华、查强、王媛、王逸群、邢政、张宝顺,亚波长结构纳米孔的近场光学测试,光电子激光 (2010)

11、陆敏*于国浩,张国光,GaN核辐射探测器材料与器件研究进展。原子能科学技术 (2010)

12、于国浩*付凯、陆敏、苑进社,两种不同结构的n-GaN基肖特基二极管电学特性的研究。半导体光电 (2010)

13、Wang RX*,Tao XM, Wang Y, Wang GF,Shang SM.Microstructures and electrical conductance of silver nanocrystalline thin films on flexible polymer substrates.Surface & Coatings Technology 204, 1206- 1210,(2010).

14、Lu Min* ,Yu Guo-Hao, Zhang Guo-Guang.Progress of GaN Material Research and Its Applications in Nuclear Detection. Atomic energy science and technology 44,(6)750-756(2010).

15、陆敏*、杨志坚 、潘尧波、陆羽、陈志忠、张国义,量子阱结构对GaN基紫光二极管性能的影响。稀有金属 (2007)

16、Hui Yang*,Kanglin Xiong, Wei He, Shulong Lu, taofei Zhou,Desheng Jiang, Rongxin Wang, Kai Qiu, Jianrong Dong.Analysis of lateral current spreading in solar cell devices.by spatially resolved electroluminescence.  Journal of Applied Physics 107, 24501(2010).

17Hui Yang*,Kanglin Xiong, Shulong Lu, taofei Zhou,Desheng Jiang,,Rongxin Wang, Kai Qiu, Jianrong Dong.Internal quantum efficiency analysis of solar cell by genetic algorithm,Solar Energy 84,1888-1891(2010).

18、Kai Fu*,Guohao Yu, Changsheng Yao, Guo Wang, Min Lu, Guoguang Zhang.  X-ray detectors based on Fe doped GaN photoconductors.   hys. Status Solidi RRL 5 187–189, 5–6  (2011).

19、王果*、付凯、姚昌胜、王金延、陆敏,自支撑GaN基核辐射探测器的I-V特性研究。固体电子学研究与进展 (2011)

20、姚昌胜*、付凯、王果、陆敏,GaN基光导型X射线探测器的光淬灭研究,核电子学与探测技术 (2011)。

21、陆敏*、付凯,利用核废料发电的GaN辐射伏特效应核电池研究。2010中国核电产业科技创新与发展论坛(宁波)论文集。

22、王荣新*、邢政、邱凯、张晓东、李晓伟、董健荣、陆书龙、周桃飞、张宝顺、杨辉,宽光谱太阳能电池的抗反膜设计。第三届微纳电子会议 (2010)

23、王荣新、张晓东、邢政、李晓伟,磁控溅射条件对掺稼氧化锌性能的影响,十二届全国固体薄膜会议 (2010)

4J.N. Lv*, Z.C. Yang, G.Z. Yan, Y. Cai, B.S. Zhang, K.J. Chen,Charaterization of GaN Cantilevers Fabricated with GaN-on-Silicon Platfor.  MEMS (2011).

25S. Liu*,J. Wang, R. Gong, Z. Dong, M. Yu, C. P. Wen, C. Zeng, Y. Cai, B. Zhang,Enhanced Device Performance of AlGaN/GaN MOSHEMT with Thermal Oxidation ,SSDM (2010).

26Rumin Gong* ,JinyanWang,Shenghou Liu, Zhihua Dong, Cheng P Wen, Min Yu, Yong Cai, Baoshun Zhang,AlGaN/GaN Dual Gate MOS HFET for Power Device Applications,ICSICT(2010).

27、刘胜厚*、蔡勇、王金延、林书勋、曾春红、时文华、张宝顺,纳米沟道阵列AlGaN/GaN HEMTs研究,第十六届全国化合物半导体材料。微波器件和光电器件学术会议

28、王国斌*、张永红、邱凯、王怀兵、范亚明、张宝顺、杨辉,MOVPE生长GaN薄膜。第十二届全国固体薄膜学术会议

29、付凯*、于国浩、陆敏,GaNPIN结构X射线探测器的研制。发光学报 12届全国发光学学术会议51-5432(7) (2011)

30、刘胜厚*、蔡勇、龚孺敏、王金延、曾春红、时文华、冯志红、王晶晶、尹甲运、文正、秦华、张宝顺,Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure. CHIN. PHYS. LETT. Vol. 28, No. 7 077202(2011).

31、刘胜厚*、蔡勇、龚孺敏、王金延、曾春红、时文华、冯志红、王晶晶、尹甲运、Cheng P.Wen、 秦华、张宝顺,Threshold Voltage’s Dependence on Channel Width in Nano-Channel Array AlGaN/GaN HEMTs.ICNS9(9th International Conference on Nitride Semiconductors, 10-15,Jul., 2011, Glasgow, UK).

32、刘胜厚、蔡勇、龚孺敏、王金延、曾春红、时文华、冯志红、王晶晶、尹甲运、Cheng P.Wen, 秦华、张宝顺,Threshold voltage’s dependence on channel width in nano-channel array AlGaN/GaN HEMTs. physica status solidi (刚接收)

33、Yongqi Fu*Dong Liu、Lechen YangBaoshun Zhang、Haijun Li、 Kai Fu、 Min Xiong,Optimization of duty ratio of metallic grating arrays for infraredphotodetectors,optics and photonics journal,(2011).

34LU Min*ZHANG Guo-GuangFU KaiYU Guo-HaoDan SuJi-feng Hu,Gallium Nitride schottky betavoltaic nuclear batteries, Energy Conversion and Management 52,1955–1958(2011).

35hangsheng Yao、Kai Fu、 Guo Wang 、Guohao Yu、Min Lu,Gallium Nitride for nuclear batteries,Advanced Materials Research,Vols 343-344, pp 56-61 (2012).

36Changsheng Yao 、Kai Fu、 Guo Wang 、Guohao Yu、Min Lu,GaN-based p–i–n X-ray detection, Phys. Status Solidi A,1–3  / DOI 10.1002/pssa,201127446(2011).

37Min Lu*,Guo Wang , Kai Fu ,Changsheng Yao , Dan SuZHANG Guo-Guang,GaN-based PIN alpha particle detectors,Nucl. Instr. and Meth. A ,doi:10.1016/j.nima.2011.09.003(2011).

 38J. D. Sun, Y. F. Sun, Y. Zhou, Z. P. Zhang, W. K. Lin, C. H. Zen, D. M. Wu, B. S. Zhang, H.Qin,A Terahertz detector Based on GaN/AlGaN High Electron Mobility Transistor with Bowtie,Accepted by ICPS-30 (AIP Conference Proceedings) 30th International Conference on Semiconductor.

39、孙建东、孙云飞、周宇、张志鹏、林文魁、曾春红、吴东岷、张宝、秦华,形天线增HEMT室温太赫兹探测器。 微纳电子技术215-219 ,4,48,(2011)。

40、H.Qin*,Y. Zhou, J. D. Sun, Y. F. Sun, Z.p.Zhang, W. k. Lin, H.X. Liu,C.H, Zeng, M,Lu, Y, Cai, D.M.Wu, S.T. Lou and B.S. Zhang,Characterization of a room temperature terahertz detector based on GaN/AlGaN HEMT.Journal of Semiconductors 064005-1,32,6(2011).

41Y.Cai*, S.H.Liu, G.D.Gu,J.Y.Wang, C.H.Zeng, W.H.Shi, Z.H. Feng, H.Qin, B.S.Zhang, Z.Q.Cheng, K.J.Chen,Senior Member, IEEEArray (NCA) AlGaN/GaN HEMTs,Enhancement-Mode Operation of Nano-Channel,Electron Device Letters.(已接收)。

42、王荣新、张宝顺,磁控溅射条件对掺镓氧化锌性能的影响。第十八届全国半导体物理会议。(2011

43、王荣新,磁控溅射掺镓氧化锌薄膜的光电性能研究,2011法国半导体器件产业发展、创新产品和新技术研讨会。